JAN1N5419US/TR
Microchip Technology
型号:
JAN1N5419US/TR
封装:
D-5B
批次:
-
数据手册:
-
描述:
DIODE GEN PURP 500V 3A D-5B
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Microchip Technology |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Military, MIL-PRF-19500/411 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, E |
| Product Status | Active |
| Capacitance @ Vr, F | - |
| Supplier Device Package | D-5B |
| Reverse Recovery Time (trr) | 250 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 500 V |
| Voltage - DC Reverse (Vr) (Max) | 500 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
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