NXP USA Inc.
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Mfr | NXP USA Inc. |
Series | - |
Package | Tape & Box (TB) |
FET Type | N-Channel |
Power - Max | 400 mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Product Status | Obsolete |
Base Product Number | J109 |
Resistance - RDS(On) | 12 Ohms |
Operating Temperature | 150°C (TJ) |
Supplier Device Package | TO-92-3 |
Drain to Source Voltage (Vdss) | 25 V |
Voltage - Breakdown (V(BR)GSS) | 25 V |
Voltage - Cutoff (VGS off) @ Id | 2 V @ 1 µA |
Current - Drain (Idss) @ Vds (Vgs=0) | 80 mA @ 15 V |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V (VGS) |