IXTD4N80P-3J
IXYS
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产品信息
参数信息
用户指南
| Mfr | IXYS |
| Series | PolarHV™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Base Product Number | IXTD4N |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.8A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | Die |
| Gate Charge (Qg) (Max) @ Vgs | 14.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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