IXFP110N15T2
IXYS
库存 : 2
最小起订量: 1 最小递增量: 1
数量
单价
1
4.845
10
4.35195
100
3.565825
500
3.035497
1000
2.56006
2000
2.432057
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产品信息
参数信息
用户指南
| Mfr | IXYS |
| Series | HiPerFET™, TrenchT2™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Base Product Number | IXFP110 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 55A, 10V |
| Power Dissipation (Max) | 480W (Tc) |
| Supplier Device Package | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
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