IXFC110N10P
IXYS
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产品信息
参数信息
用户指南
| Mfr | IXYS |
| Series | HiPerFET™, PolarHT™ |
| Package | Box |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS220™ |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Base Product Number | IXFC110N10 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 55A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Supplier Device Package | ISOPLUS220™ |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
2000+日均询价数量
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