Infineon Technologies
型号:
ISZ0804NLSATMA1
封装:
PG-TSDSON-8-26
批次:
-
数据手册:
-
描述:
MOSFET N-CH 100V 11A/58A TSDSON
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.368
10
1.121
100
0.8721
500
0.739176
1000
0.602148
2000
0.566846
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Mfr | Infineon Technologies |
Series | OptiMOS™ 5 |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.3V @ 28µA |
Base Product Number | ISZ0804N |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 10V |
Power Dissipation (Max) | 2.1W (Ta), 60W (Tc) |
Supplier Device Package | PG-TSDSON-8-26 |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 50 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) |