ISZ0602NLSATMA1

Infineon Technologies

型号:

ISZ0602NLSATMA1

封装:

PG-TSDSON-8-26

批次:

-

数据手册:

-

描述:

MOSFET N-CH 80V 12A/64A TSDSON

购买数量:

库存 : 9984

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.2825

  • 10

    1.04785

  • 100

    0.815005

  • 500

    0.690859

  • 1000

    0.56277

  • 2000

    0.529786

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 29µA
Base Product Number ISZ0602N
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 7.8mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 60W (Tc)
Supplier Device Package PG-TSDSON-8-26
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 64A (Tc)