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ISZ019N03L5SATMA1

Infineon Technologies

型号:

ISZ019N03L5SATMA1

封装:

PG-TSDSON-8-FL

批次:

-

数据手册:

-

描述:

TRENCH <= 40V

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.9mOhm @ 20A, 10V
Power Dissipation (Max) -
Supplier Device Package PG-TSDSON-8-FL
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 40A (Tc)