ISS55EP06LMXTSA1
Infineon Technologies
型号:
ISS55EP06LMXTSA1
封装:
PG-SOT23-3-5
批次:
-
数据手册:
-
描述:
MOSFET P-CH 60V 180MA SOT23-3
购买数量:
库存 : 127257
最小起订量: 1 最小递增量: 1
数量
单价
1
0.361
10
0.2489
100
0.1216
500
0.101422
1000
0.070462
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 11µA |
| Base Product Number | ISS55EP06 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.5Ohm @ 180mA, 10V |
| Power Dissipation (Max) | 400mW (Ta) |
| Supplier Device Package | PG-SOT23-3-5 |
| Gate Charge (Qg) (Max) @ Vgs | 0.59 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) |
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