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ISC104N12LM6ATMA1

Infineon Technologies

型号:

ISC104N12LM6ATMA1

封装:

PG-TDSON-8

批次:

-

数据手册:

-

描述:

OPTIMOS 6 POWER-TRANSISTOR,120V

购买数量:

库存 : 4948

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.9095

  • 10

    1.58365

  • 100

    1.26065

  • 500

    1.066736

  • 1000

    0.905112

  • 2000

    0.859864

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™ 6
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 35µA
Base Product Number ISC104
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 10.4mOhm @ 28A, 10V
Power Dissipation (Max) 3W (Ta), 94W (Tc)
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 63A (Tc)