ISC0802NLSATMA1

Infineon Technologies

型号:

ISC0802NLSATMA1

封装:

PG-TDSON-8-7

批次:

-

数据手册:

-

描述:

MOSFET N-CH 100V 22A/150A TDSON

购买数量:

库存 : 1123

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.7645

  • 10

    2.2933

  • 100

    1.82552

  • 500

    1.5447

  • 1000

    1.310658

  • 2000

    1.245127

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 92µA
Base Product Number ISC0802N
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.6mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Supplier Device Package PG-TDSON-8-7
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 5190 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 150A (Tc)