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ISC022N10NM6ATMA1

Infineon Technologies

型号:

ISC022N10NM6ATMA1

封装:

PG-TSON-8-3

批次:

-

数据手册:

-

描述:

TRENCH >=100V PG-TSON-8

购买数量:

库存 : 8846

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    4.3985

  • 10

    3.69455

  • 100

    2.988605

  • 500

    2.656504

  • 1000

    2.274632

  • 2000

    2.141813

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™ 6
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 3.3V @ 147µA
Base Product Number ISC022N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.24mOhm @ 50A, 10V
Power Dissipation (Max) 3W (Ta), 254W (Tc)
Supplier Device Package PG-TSON-8-3
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 6880 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 230A (Tc)