IRLML6401TRPBF-1
Infineon Technologies
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产品信息
参数信息
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| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Bulk |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Supplier Device Package | PG-SOT23-3-901 |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
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