IRL6372TRPBF
Infineon Technologies
型号:
IRL6372TRPBF
封装:
8-SO
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 30V 8.1A 8SOIC
购买数量:
库存 : 6419
最小起订量: 1 最小递增量: 1
数量
单价
1
0.855
10
0.7011
100
0.545015
500
0.461985
1000
0.376342
2000
0.354284
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Base Product Number | IRL6372 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 17.9mOhm @ 8.1A, 4.5V |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 8.1A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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