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IRFU9N20D
Infineon Technologies
型号:
IRFU9N20D
封装:
IPAK (TO-251AA)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 200V 9.4A IPAK
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.6A, 10V |
| Power Dissipation (Max) | 86W (Tc) |
| Supplier Device Package | IPAK (TO-251AA) |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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