IRFHS8242TRPBF
Infineon Technologies
型号:
IRFHS8242TRPBF
封装:
6-PQFN (2x2) (DFN2020)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 25V 9.9A/21A 6PQFN
购买数量:
库存 : 2352
最小起订量: 1 最小递增量: 1
数量
单价
1
0.513
10
0.4427
100
0.33041
500
0.259635
1000
0.20063
2000
0.182932
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Base Product Number | IRFHS8242 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 8.5A, 10V |
| Power Dissipation (Max) | 2.1W (Ta) |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 653 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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