IRFHM8363TRPBF
Infineon Technologies
型号:
IRFHM8363TRPBF
封装:
8-PQFN (3.3x3.3), Power33
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 30V 11A 8PQFN
购买数量:
库存 : 10808
最小起订量: 1 最小递增量: 1
数量
单价
1
1.007
10
0.89775
100
0.700245
500
0.578455
1000
0.456674
2000
0.426227
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 2.7W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Base Product Number | IRFHM8363 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
2000+日均询价数量
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