IRFHM830TRPBF
Infineon Technologies
型号:
IRFHM830TRPBF
封装:
8-PQFN-Dual (3.3x3.3)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 30V 21A/40A PQFN
购买数量:
库存 : 8648
最小起订量: 1 最小递增量: 1
数量
单价
1
0.855
10
0.7619
100
0.59413
500
0.49077
1000
0.387448
2000
0.361618
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Base Product Number | IRFHM830 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| Supplier Device Package | 8-PQFN-Dual (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
