Infineon Technologies
型号:
IRFHM3911TRPBF
封装:
8-PQFN (3x3)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 100V 3.2A/20A 8PQFN
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.76
10
0.65835
100
0.455715
500
0.380798
1000
0.324083
2000
0.288638
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Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 35µA |
Base Product Number | IRFHM3911 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 115mOhm @ 6.3A, 10V |
Power Dissipation (Max) | 2.8W (Ta), 29W (Tc) |
Supplier Device Package | 8-PQFN (3x3) |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 50 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta), 20A (Tc) |