IRFD123
Harris Corporation
库存 : 40377
最小起订量: 1 最小递增量: 1
数量
单价
346
0.8265
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产品信息
参数信息
用户指南
| Mfr | Harris Corporation |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
| Supplier Device Package | 4-HVMDIP |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
2000+日均询价数量
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2800+全球品牌
15,000 ㎡库存仓库
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