IRF9Z34NLPBF
Infineon Technologies
库存 : 335
最小起订量: 1 最小递增量: 1
数量
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335
0.988
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产品信息
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用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Bulk |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Supplier Device Package | TO-262 |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
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