IRF630NPBF
Infineon Technologies
型号:
IRF630NPBF
封装:
TO-220AB
批次:
-
数据手册:
-
描述:
MOSFET N-CH 200V 9.3A TO220AB
购买数量:
库存 : 9966
最小起订量: 1 最小递增量: 1
数量
单价
1
1.0735
10
0.87685
100
0.681625
500
0.57779
1000
0.470668
2000
0.44308
5000
0.42198
10000
0.402506
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRF630 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| Power Dissipation (Max) | 82W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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