Infineon Technologies
型号:
IRF2805LPBF
封装:
TO-262
批次:
-
数据手册:
-
描述:
MOSFET N-CH 55V 135A TO262
购买数量:
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| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 104A, 10V |
| Power Dissipation (Max) | 200W (Tc) |
| Supplier Device Package | TO-262 |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 135A (Tc) |