IRF1010EPBF
Infineon Technologies
型号:
IRF1010EPBF
封装:
TO-220AB
批次:
-
数据手册:
-
描述:
MOSFET N-CH 60V 84A TO220AB
购买数量:
库存 : 3524
最小起订量: 1 最小递增量: 1
数量
单价
1
1.33
10
1.0906
100
0.84854
500
0.719207
1000
0.585865
2000
0.551522
5000
0.525255
10000
0.50102
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRF1010 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| Power Dissipation (Max) | 200W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
2000+日均询价数量
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