IRD3CH101DB6
Infineon Technologies
型号:
IRD3CH101DB6
封装:
Die
批次:
-
数据手册:
描述:
DIODE GEN PURP 1.2KV 200A DIE
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Product Status | Obsolete |
| Base Product Number | IRD3CH101 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | Die |
| Reverse Recovery Time (trr) | 360 ns |
| Current - Reverse Leakage @ Vr | 3.6 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 200A |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 2.7 V @ 200 A |
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