IQE065N10NM5CGATMA1
Infineon Technologies
型号:
IQE065N10NM5CGATMA1
封装:
PG-TTFN-9-1
批次:
-
数据手册:
-
描述:
TRENCH >=100V PG-TTFN-9
购买数量:
库存 : 9940
最小起订量: 1 最小递增量: 1
数量
单价
1
2.679
10
2.24675
100
1.817445
500
1.615494
1000
1.383266
2000
1.302488
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 48µA |
| Base Product Number | IQE065N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) |
| Supplier Device Package | PG-TTFN-9-1 |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 85A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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