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IQE050N08NM5CGATMA1

Infineon Technologies

型号:

IQE050N08NM5CGATMA1

封装:

PG-TTFN-9-1

批次:

-

数据手册:

-

描述:

TRENCH 40<-<100V PG-TTFN-9

购买数量:

库存 : 9835

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.546

  • 10

    2.1394

  • 100

    1.73071

  • 500

    1.53843

  • 1000

    1.31728

  • 2000

    1.240358

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 49µA
Base Product Number IQE050N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Supplier Device Package PG-TTFN-9-1
Gate Charge (Qg) (Max) @ Vgs 43.2 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 101A (Tc)