IQE006NE2LM5CGSCATMA1

Infineon Technologies

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封装:

PG-WHTFN-9-1

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描述:

OPTIMOS LOWVOLTAGE POWER MOSFET

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Mfr	Infineon Technologies
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±16V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	9-PowerWDFN
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	0.58mOhm @ 20A, 10V
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Supplier Device Package	PG-WHTFN-9-1
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Drain to Source Voltage (Vdss)	25 V
Input Capacitance (Ciss) (Max) @ Vds	5453 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	47A (Ta), 310A (Tc)