Infineon Technologies
型号:
IPW65R150CFDFKSA1
封装:
PG-TO247-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 22.4A TO247-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
4.7785
10
4.0147
100
3.24748
请发送询价,我们将立即回复。

| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4.5V @ 900µA |
| Base Product Number | IPW65R150 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.3A, 10V |
| Power Dissipation (Max) | 195.3W (Tc) |
| Supplier Device Package | PG-TO247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |