Infineon Technologies
型号:
IPW65R019C7FKSA1
封装:
PG-TO247-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 75A TO247-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
23.94
10
21.2762
100
18.609075
500
15.879744
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Mfr | Infineon Technologies |
Series | CoolMOS™ C7 |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 2.92mA |
Base Product Number | IPW65R019 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 19mOhm @ 58.3A, 10V |
Power Dissipation (Max) | 446W (Tc) |
Supplier Device Package | PG-TO247-3 |
Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 400 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |