IPW65R019C7
Infineon Technologies
型号:
IPW65R019C7
封装:
PG-TO247-3
批次:
-
数据手册:
-
描述:
75A, 650V, 0.019OHM, N-CHANNEL M
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 2.92mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 58.3A, 10V |
| Power Dissipation (Max) | 446W (Tc) |
| Supplier Device Package | PG-TO247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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