IPW50R299CP
Infineon Technologies
型号:
IPW50R299CP
封装:
PG-TO247-3-21
批次:
-
数据手册:
-
描述:
N-CHANNEL POWER MOSFET
购买数量:
库存 : 9838
最小起订量: 1 最小递增量: 1
数量
单价
221
1.292
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Supplier Device Package | PG-TO247-3-21 |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
