Infineon Technologies
型号:
IPU80R900P7AKMA1
封装:
PG-TO251-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 800V 6A TO251-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.4915
10
1.21695
100
0.94639
500
0.802199
1000
0.653486
2000
0.615172
5000
0.585884
10000
0.558838
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Mfr | Infineon Technologies |
Series | CoolMOS™ P7 |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 110µA |
Base Product Number | IPU80R900 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.2A, 10V |
Power Dissipation (Max) | 45W (Tc) |
Supplier Device Package | PG-TO251-3 |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Drain to Source Voltage (Vdss) | 800 V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 500 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |