IPU60R1K5CEAKMA2
Infineon Technologies
型号:
IPU60R1K5CEAKMA2
封装:
PG-TO251-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 600V 3.1A TO251-3
购买数量:
库存 : 1100
最小起订量: 1 最小递增量: 1
数量
单价
1
0.665
10
0.5814
100
0.44593
500
0.352526
1000
0.282017
2000
0.255578
5000
0.237946
10000
0.22914
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ CE |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Base Product Number | IPU60R1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| Power Dissipation (Max) | 49W (Tc) |
| Supplier Device Package | PG-TO251-3 |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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