Infineon Technologies
型号:
IPTG210N25NM3FDATMA1
封装:
PG-HSOG-8-1
批次:
-
数据手册:
-
描述:
TRENCH >=100V PG-HSOG-8
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
8.132
10
6.97015
100
5.80887
500
5.125459
请发送询价,我们将立即回复。

| Mfr | Infineon Technologies |
| Series | OptiMOS™ 3 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSMD, Gull Wing |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 267µA |
| Base Product Number | IPTG210N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 69A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Supplier Device Package | PG-HSOG-8-1 |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 125 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta), 77A (Tc) |