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IPT017N10NF2SATMA1

Infineon Technologies

型号:

IPT017N10NF2SATMA1

封装:

PG-HSOF-8

批次:

-

数据手册:

-

描述:

MOSFET

购买数量:

库存 : 1760

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    5.472

  • 10

    4.59325

  • 100

    3.71583

  • 500

    3.302979

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 216µA
Base Product Number IPT017
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.75mOhm @ 150A, 10V
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Supplier Device Package PG-HSOF-8
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 9300 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 294A (Tc)