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IPT013N08NM5LFATMA1

Infineon Technologies

型号:

IPT013N08NM5LFATMA1

封装:

PG-HSOF-8

批次:

-

数据手册:

-

描述:

TRENCH 40<-<100V PG-HSOF-8

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Product Status Active
Vgs(th) (Max) @ Id 4.1V @ 250µA
Base Product Number IPT013N
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.3mOhm @ 150A, 10V
Power Dissipation (Max) 278W (Tc)
Supplier Device Package PG-HSOF-8
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 820 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 333A (Tc)