IPS65R1K4C6
Infineon Technologies
型号:
IPS65R1K4C6
封装:
PG-TO251-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 3.2A TO251-3
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ C6 |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| Power Dissipation (Max) | 28W (Tc) |
| Supplier Device Package | PG-TO251-3 |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
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