IPP80N06S2L-06

Infineon Technologies

型号:

IPP80N06S2L-06

封装:

PG-TO220-3-1

批次:

-

数据手册:

-

描述:

N-CHANNEL POWER MOSFET

购买数量:

库存 : 请查询

请发送RFQ,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series *
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2V @ 180µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 6.3mOhm @ 69A, 10V
Power Dissipation (Max) 250W (Tc)
Supplier Device Package PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)