IPP65R115CFD7AAKSA1
Infineon Technologies
型号:
IPP65R115CFD7AAKSA1
封装:
PG-TO220-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 21A TO220-3
购买数量:
库存 : 27
最小起订量: 1 最小递增量: 1
数量
单价
1
6.0515
10
5.08155
100
4.11122
500
3.654384
1000
3.129072
2000
2.946358
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, CoolMOS™ CFD7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 490µA |
| Base Product Number | IPP65R115 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 9.7A, 10V |
| Power Dissipation (Max) | 114W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
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