Infineon Technologies
型号:
IPP60R125CPXKSA1
封装:
PG-TO220-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 25A TO220-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
6.3935
10
5.77885
100
4.78439
500
4.166168
1000
3.628592
2000
3.494204
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Mfr | Infineon Technologies |
Series | CoolMOS™ |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
Base Product Number | IPP60R125 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 125mOhm @ 16A, 10V |
Power Dissipation (Max) | 208W (Tc) |
Supplier Device Package | PG-TO220-3 |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |