IPP60R080P7XKSA1
Infineon Technologies
型号:
IPP60R080P7XKSA1
封装:
PG-TO220-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 37A TO220-3
购买数量:
库存 : 223
最小起订量: 1 最小递增量: 1
数量
单价
1
5.4815
10
4.5999
100
3.721055
500
3.307596
1000
2.832121
2000
2.666745
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 590µA |
| Base Product Number | IPP60R080 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 11.8A, 10V |
| Power Dissipation (Max) | 129W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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