IPP126N10N3G

Infineon Technologies

型号:

IPP126N10N3G

封装:

PG-TO220-3

批次:

-

数据手册:

-

描述:

MOSFET N-CH 100V 58A TO220-3

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 46µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 12.6mOhm @ 46A, 10V
Power Dissipation (Max) 94W (Tc)
Supplier Device Package PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)