IPP111N15N3GXKSA1
Infineon Technologies
型号:
IPP111N15N3GXKSA1
封装:
PG-TO220-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 150V 83A TO220-3
购买数量:
库存 : 1572
最小起订量: 1 最小递增量: 1
数量
单价
1
4.997
10
4.4859
100
3.675265
500
3.128673
1000
2.638644
2000
2.506718
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 160µA |
| Base Product Number | IPP111 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 83A, 10V |
| Power Dissipation (Max) | 214W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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