Infineon Technologies
型号:
IPP057N06N3GXKSA1
封装:
PG-TO220-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 60V 80A TO220-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.482
10
1.33
100
1.068845
500
0.87818
1000
0.727634
2000
0.677454
5000
0.652365
10000
0.627276
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| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 58µA |
| Base Product Number | IPP057 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| Power Dissipation (Max) | 115W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |