IPP039N04LGXKSA1

Infineon Technologies

型号:

IPP039N04LGXKSA1

封装:

PG-TO220-3-1

批次:

-

数据手册:

-

描述:

MOSFET N-CH 40V 80A TO220-3

购买数量:

库存 : 483

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.368

  • 10

    1.22455

  • 100

    0.954655

  • 500

    0.788652

  • 1000

    0.62262

  • 2000

    0.581115

  • 5000

    0.552054

  • 10000

    0.531306

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2V @ 45µA
Base Product Number IPP039
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.9mOhm @ 80A, 10V
Power Dissipation (Max) 94W (Tc)
Supplier Device Package PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)