Infineon Technologies
型号:
IPP039N04LGXKSA1
封装:
PG-TO220-3-1
批次:
-
数据手册:
-
描述:
MOSFET N-CH 40V 80A TO220-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.368
10
1.22455
100
0.954655
500
0.788652
1000
0.62262
2000
0.581115
5000
0.552054
10000
0.531306
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Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 2V @ 45µA |
Base Product Number | IPP039 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 3.9mOhm @ 80A, 10V |
Power Dissipation (Max) | 94W (Tc) |
Supplier Device Package | PG-TO220-3-1 |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |