IPP024N06N3G

Infineon Technologies

型号:

IPP024N06N3G

品牌:

封装:

PG-TO220-3-1

批次:

数据手册:

描述:

POWER FIELD-EFFECT TRANSISTOR, 1

购买数量:

库存 : 1151

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 196µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.4mOhm @ 100A, 10V
Power Dissipation (Max)	250W (Tc)
Supplier Device Package	PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs	275 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	23000 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)