IPN80R1K4P7ATMA1
Infineon Technologies
型号:
IPN80R1K4P7ATMA1
封装:
PG-SOT223
批次:
-
数据手册:
-
描述:
MOSFET N-CH 800V 4A SOT223
购买数量:
库存 : 3066
最小起订量: 1 最小递增量: 1
数量
单价
1
1.045
10
0.93575
100
0.72941
500
0.602509
1000
0.475674
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Base Product Number | IPN80R1 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
| Power Dissipation (Max) | 7W (Tc) |
| Supplier Device Package | PG-SOT223 |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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