IPN50R3K0CE

Infineon Technologies

型号:

IPN50R3K0CE

封装:

PG-SOT223

批次:

-

数据手册:

-

描述:

SMALL SIGNAL FIELD-EFFECT TRANSI

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series CoolMOS™ CE
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-261-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 30µA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3Ohm @ 400mA, 13V
Power Dissipation (Max) 5W (Tc)
Supplier Device Package PG-SOT223
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Input Capacitance (Ciss) (Max) @ Vds 84 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 13V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)