IPN50R1K4CEATMA1
Infineon Technologies
型号:
IPN50R1K4CEATMA1
封装:
PG-SOT223-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 500V 4.8A SOT223
购买数量:
库存 : 3000
最小起订量: 1 最小递增量: 1
数量
单价
1
0.5795
10
0.49495
100
0.343995
500
0.268603
1000
0.21832
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ CE |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Base Product Number | IPN50R1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 900mA, 13V |
| Power Dissipation (Max) | 5W (Tc) |
| Supplier Device Package | PG-SOT223-3 |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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